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About
The CY62148ESL-55ZAXI is a 4 Mbit (512K × 8) asynchronous static random-access memory (SRAM) designed for applications requiring low-power, high-reliability data storage. Manufactured by Infineon Technologies (formerly Cypress Semiconductor), this SRAM operates across a wide voltage range (2.2V–5.5V), making it suitable for both 3V and 5V systems. Its industrial-grade temperature range (-40°C to +85°C) ensures stable performance in harsh environments, including automotive, industrial automation, and embedded systems.
This SRAM features a parallel asynchronous interface, meaning it does not require a clock signal for read/write operations, simplifying integration into legacy systems. With an access time of 55 ns, it provides fast data retrieval, while its low standby current (~5 µA in CMOS mode) makes it ideal for battery-backed applications. The 512K × 8-bit organization allows flexible memory addressing, supporting byte-wide operations for microcontroller-based designs.
Packaged in a 32-pin STSOP (Thin Small Outline Package), the device is optimized for surface-mount (SMD) assembly, ensuring compact PCB integration. It complies with RoHS 6/6 standards and is free from hazardous substances (SVHC-free as of January 2024). While not automotive-qualified, its industrial-grade robustness makes it a reliable choice for medical devices, networking equipment, and industrial controllers.
A key advantage of the CY62148ESL-55ZAXI is its dual-voltage capability, allowing seamless transitions between low-power (2.2V–3.6V) and standard (4.5V–5.5V) modes without external level shifters. This flexibility extends its use across diverse power architectures, from portable electronics to legacy 5V systems. Additionally, its 10+ year data retention ensures long-term reliability for mission-critical applications.
Part of Infineon’s CY62148E series, this SRAM is actively produced, though some distributors may list it as transitioning to obsolete. Engineers value its balance of speed, power efficiency, and durability, making it a go-to solution for designs requiring dependable volatile memory. For detailed specifications, the datasheet (PDF) provides comprehensive technical insights.
Key Features
Memory Configuration
- 4 Megabit (4,194,304 bits) static random access memory organized as 524,288 words × 8 bits
- Fully static operation with no refresh requirements
- Asynchronous memory interface with no clock signal requirement
- Byte-wide data bus (8-bit I/O) with separate data input and output
Performance Characteristics
- 55ns maximum access time from address valid (tAA)
- 55ns maximum write cycle time (tWC)
- Equal read and write cycle times for simplified timing design
- Automatic power-down when deselected for reduced power consumption
Power Management
- Wide operating voltage range supporting both low-voltage and standard systems:
- 2.2V to 3.6V for battery-powered applications
- 4.5V to 5.5V for standard 5V systems
- Typical active operating current of 20mA at maximum speed
- Ultra-low standby current:
- 5μA typical in CMOS standby mode
- 1μA maximum data retention current at 2.0V
- Automatic power-down when chip is deselected
Reliability and Environmental
- Industrial temperature range operation (-40°C to +85°C)
- 10+ years data retention with power applied
- High noise immunity characteristic of CMOS technology
- Latch-up protection exceeds 100mA per JESD78 standard
Physical Characteristics
- 32-lead Thin Small Outline Package (TSOP) Type I
- Package dimensions: 11.8mm × 8mm × 1.2mm
- 0.8mm lead pitch for high-density PCB mounting
- Surface mount technology (SMT) compatible
- Moisture Sensitivity Level (MSL) 3 classification
Compliance and Standards
- RoHS 6/6 compliant (lead-free and halogen-free)
- Manufactured in ISO 9001 certified facilities
- ECCN 3A991.b.2.a export classification
- JEDEC standard compatible pinout
Interface Characteristics
- TTL-compatible inputs and outputs
- Three-state outputs for bus compatibility
- Separate upper and lower byte controls (when applicable)
- Asynchronous operation with no clock required
- CE (Chip Enable) and OE (Output Enable) control signals
Applications
1. Industrial Automation & Control Systems
- Used in PLCs (Programmable Logic Controllers) for temporary data storage during real-time operations.
- Supports motor control systems requiring fast access to configuration data.
- Ideal for sensor interfaces in harsh environments due to its industrial temperature range (-40°C to +85°C).
2. Consumer Electronics
- Embedded in smart TVs and set-top boxes for buffering high-speed video data.
- Used in gaming consoles for quick access to game state data.
- Powers wearable devices (e.g., fitness trackers) where low-power operation is critical.
3. Networking & Communication Equipment
- Acts as buffer memory in routers, switches, and modems for packet processing.
- Supports 5G base stations for temporary storage of signal processing data.
- Used in VoIP devices for call session management.
4. Medical Devices
- Integrated into portable medical monitors (e.g., ECG, glucose meters) for real-time data logging.
- Supports diagnostic imaging equipment (ultrasound, X-ray) requiring high-speed memory access.
- Used in infusion pumps for storing dosage algorithms.
5. Automotive Systems (Non-Safety-Critical)
- Powers infotainment systems for multimedia buffering.
- Used in telematics units for GPS and vehicle data storage.
- Supports dashboard displays for fast rendering of graphics.
6. Embedded Systems & IoT
- Enables edge computing in smart home hubs (e.g., Zigbee/Wi-Fi gateways).
- Used in industrial IoT sensors for local data caching before cloud transmission.
- Supports firmware storage in microcontroller-based designs.
7. Test & Measurement Equipment
- Provides high-speed memory for oscilloscopes and logic analyzers.
- Used in spectrum analyzers for temporary FFT data storage.
- Supports calibration systems requiring low-latency access.
8. Aerospace & Defense
- Deployed in avionics systems for non-critical flight data logging.
- Used in ground radar systems for intermediate signal processing.
- Supports military comms equipment where reliability is key.
9. Legacy System Upgrades
- Replaces older SRAMs in retro computing and arcade machine repairs.
- Used in industrial machinery with 5V/3V hybrid power designs.
10. Energy Management Systems
- Stores real-time metrics in smart meters.
- Supports solar inverters for power conversion algorithms.
- Used in battery management systems (BMS) for EV charging stations.
Key Reasons for Adoption
- Dual-voltage compatibility (2.2V–5.5V) simplifies migration between old and new systems.
- Low standby current (~5 µA) extends battery life in portable devices.
- Industrial-grade reliability ensures operation in extreme conditions.
Advantages
Superior Power Efficiency
The memory offers exceptional power management capabilities, making it ideal for battery-powered and energy-sensitive applications. Its ultra-low standby current consumption (as low as 5μA in CMOS mode) significantly extends battery life in portable devices. The automatic power-down feature when deselected further enhances energy savings without compromising performance.
Exceptional Design Flexibility
Engineers benefit from the device’s wide voltage range compatibility (2.2V-5.5V), which allows seamless integration into both modern low-voltage and legacy 5V systems. This dual-voltage capability eliminates the need for additional level-shifting components, simplifying board design and reducing BOM costs. The memory’s architecture supports easy migration between different voltage domains within a system.
Reliable Performance in Harsh Conditions
With its industrial-grade temperature range (-40°C to +85°C), the SRAM maintains stable operation in extreme environments where commercial-grade components would fail. This robustness makes it particularly valuable for industrial automation, outdoor equipment, and automotive applications (though not formally AEC-Q100 qualified).
Simplified System Integration
The asynchronous interface eliminates complex timing synchronization requirements, reducing design complexity and verification time. The standardized 32-pin TSOP package and JEDEC-compatible pinout ensure easy replacement and upgrade paths, while the surface-mount design facilitates high-density PCB layouts.
Long-Term Availability and Support
As part of Infineon’s established memory portfolio (formerly Cypress), the device benefits from the manufacturer’s extensive quality control processes and long product lifecycle support. The mature technology offers proven reliability with a 10+ year data retention capability, crucial for systems requiring long-term field operation.
Cost-Effective Memory Solution
The SRAM provides an optimal balance between performance and cost for applications that don’t require DRAM densities. Its fully static nature eliminates refresh circuitry overhead, while the high noise immunity reduces the need for additional signal conditioning components in electrically noisy environments.
Specifications
| Category | Specification |
|---|---|
| Manufacturer | Infineon Technologies (formerly Cypress Semiconductor) |
| Product Category | SRAM (Static Random-Access Memory) |
| Product Type | Asynchronous SRAM (Parallel Interface) |
| Series | CY62148E (Low-Power SRAM Series) |
| Memory Size | 4 Mbit (512K × 8) |
| Organization | 512K words × 8 bits |
| Access Time (tAA) | 55 ns |
| Write Cycle Time (tWC) | 55 ns |
| Voltage Supply Range | 2.2V–3.6V (Low-Power Mode) / 4.5V–5.5V (Standard Mode) |
| Operating Current | Active: ~20 mA (typical) / Standby: ~5 µA (CMOS standby mode) |
| Operating Temperature | -40°C to +85°C (Industrial Grade) |
| Package / Case | 32-TFSOP (STSOP-I, 11.80mm width, 0.8mm pitch) |
| Mounting Type | Surface Mount (SMD) |
| Pin Count | 32 |
| Interface | Parallel (Asynchronous, 8-bit I/O) |
| Data Retention | 10+ years (with power applied) |
| Automotive Qualified | No (Industrial/Commercial Use Only) |
| RoHS Compliance | Yes (EU RoHS 6/6 compliant, Lead-Free) |
| ECCN (Export Control) | 3A991.b.2.a (EAR99 – Not restricted for most countries) |
| Packaging | Tray (Standard Packaging, ~250 units per tray) |
| Supplier Device Package | 32-sTSOP (Thin Small Outline Package) |
| Status | Active (but may be transitioning to obsolete in some distributors) |
Comparison with Similar Components
1. CY62148ESL-55ZAXI vs. CY62128ELL-45ZXI
| Parameter | CY62148ESL-55ZAXI | CY62128ELL-45ZXI |
|---|---|---|
| Memory Size | 4Mbit (512K × 8) | 2Mbit (256K × 8) |
| Access Time | 55ns | 45ns (faster) |
| Voltage Range | 2.2V–3.6V / 4.5V–5.5V (dual-mode) | 2.7V–5.5V (single range) |
| Standby Current | 5µA (CMOS) | 20µA (higher) |
| Package | 32-TSOP (11.8mm width) | 32-TSOP (same footprint) |
| Halogen-Free | Yes | Undefined (varies by batch) |
| Key Advantage | Higher density, ultra-low power | Faster access time, simpler voltage range |
Recommendation: Choose CY62148ESL-55ZAXI for larger memory needs and battery-powered designs. Opt for CY62128ELL-45ZXI if speed is critical.
2. CY62148ESL-55ZAXI vs. AS6C2008A-55TIN
| Parameter | CY62148ESL-55ZAXI | AS6C2008A-55TIN |
|---|---|---|
| Memory Size | 4Mbit (512K × 8) | 2Mbit (256K × 8) |
| Voltage Range | 2.2V–5.5V (wide) | 2.7V–5.5V (narrower) |
| Standby Current | 5µA | 20µA |
| Interface | Parallel (asynchronous) | Parallel (asynchronous) |
| Package | 32-TSOP | 32-TSOP (18.4mm width, larger) |
| RoHS Compliance | Yes | Yes |
| Key Advantage | Wider voltage support, lower power | Lower cost (typically) |
Recommendation: CY62148ESL-55ZAXI is better for flexible power designs, while AS6C2008A-55TIN suits cost-sensitive 2Mbit applications.
3. CY62148ESL-55ZAXI vs. CY62167GE30-45ZXI
| Parameter | CY62148ESL-55ZAXI | CY62167GE30-45ZXI |
|---|---|---|
| Memory Size | 4Mbit (512K × 8) | 16Mbit (1M × 16) |
| Access Time | 55ns | 45ns |
| Voltage Range | 2.2V–5.5V | 3V–3.6V (low-voltage only) |
| I/O Width | 8-bit | 16-bit |
| Package | 32-TSOP | 48-TFSOP (larger) |
| Standby Current | 5µA | 10µA |
| Key Advantage | Dual-voltage, compact | Higher density, 16-bit bus |
Recommendation: Use CY62167GE30-45ZXI for high-bandwidth systems (e.g., DSPs). CY62148ESL-55ZAXI is better for mixed-voltage designs.
4. CY62148ESL-55ZAXI vs. CY62256NLL-70SNXC
| Parameter | CY62148ESL-55ZAXI | CY62256NLL-70SNXC |
|---|---|---|
| Memory Size | 4Mbit (512K × 8) | 256Kbit (32K × 8) |
| Access Time | 55ns | 70ns (slower) |
| Voltage Range | 2.2V–5.5V | 4.5V–5.5V (5V-only) |
| Package | 32-TSOP | 28-SOIC (thicker) |
| Standby Current | 5µA | 100µA (much higher) |
| Status | Active | Obsolete |
| Key Advantage | Modern, low-power, higher density | Legacy 5V compatibility |
Recommendation: CY62148ESL-55ZAXI is superior in every way unless 5V-only support is mandatory.
5. CY62148ESL-55ZAXI vs. CY62128EV30LL-45SXI
| Parameter | CY62148ESL-55ZAXI | CY62128EV30LL-45SXI |
|---|---|---|
| Memory Size | 4Mbit (512K × 8) | 1Mbit (128K × 8) |
| Access Time | 55ns | 45ns |
| Voltage Range | 2.2V–5.5V | 2.7V–3.6V (low-voltage only) |
| Package | 32-TSOP | 32-SOIC (wider) |
| Standby Current | 5µA | 2µA (lower) |
| Key Advantage | Higher density, dual-voltage | Ultra-low standby current |
Recommendation: CY62128EV30LL-45SXI is ideal for ultra-low-power 1Mbit needs, while CY62148ESL-55ZAXI offers more capacity.
6. CY62148ESL-55ZAXI vs. CY7C1049DV33
| Parameter | CY62148ESL-55ZAXI | CY7C1049DV33 |
|---|---|---|
| Memory Size | 4Mbit (512K × 8) | 4Mbit (512K × 8) |
| Access Time | 55ns | 10ns (much faster) |
| Voltage Range | 2.2V–5.5V | 3V–3.6V (low-voltage only) |
| Standby Current | 5µA | 15µA |
| Package | 32-TSOP | 36-TSOP II (larger) |
| Key Advantage | Dual-voltage flexibility | High-speed performance |
Recommendation: CY7C1049DV33 is better for high-speed computing, while CY62148ESL-55ZAXI suits mixed-voltage systems.
7. CY62148ESL-55ZAXI vs. IS61WV51216BLL-10TLI
| Parameter | CY62148ESL-55ZAXI | IS61WV51216BLL-10TLI |
|---|---|---|
| Memory Size | 4Mbit (512K × 8) | 8Mbit (512K × 16) |
| Access Time | 55ns | 10ns (much faster) |
| Voltage Range | 2.2V–5.5V | 3.3V only |
| I/O Width | 8-bit | 16-bit |
| Package | 32-TSOP | 44-TSOP (larger) |
| Key Advantage | Flexible voltage, compact | High bandwidth, 16-bit bus |
Recommendation: IS61WV51216BLL-10TLI is superior for 16-bit systems, while CY62148ESL-55ZAXI is better for 8-bit mixed-voltage designs.
Summary & Final Recommendations
- For High Density + Low Power: CY62148ESL-55ZAXI (best balance of 4Mbit, dual-voltage, and ultra-low standby current).
- For Speed-Critical Designs: CY7C1049DV33 (10ns access) or IS61WV51216BLL-10TLI (10ns, 16-bit).
- For Ultra-Low-Power 1Mbit: CY62128EV30LL-45SXI (2µA standby).
- For Legacy 5V Systems: CY62256NLL-70SNXC (but obsolete).
- For 16-Bit Bus Systems: CY62167GE30-45ZXI or IS61WV51216BLL-10TLI.
Best All-Around Choice: CY62148ESL-55ZAXI due to its flexible voltage support, industrial-grade reliability, and balanced performance.
Frequently Asked Questions (FAQs)
General Information
- What is the CY62148ESL-55ZAXI?
- A 4Mbit (512K × 8) asynchronous SRAM by Infineon, optimized for low-power and industrial applications.
- Is this SRAM volatile or non-volatile?
- Volatile (data is lost when power is removed).
- What is the difference between CY62148ESL-55ZAXI and CY62148ELL-45ZXI?
- The “55” variant has a 55ns access time vs. 45ns; the “ELL” version supports 2.7V–5.5V only.
- Is the CY62148ESL-55ZAXI still in production?
- Yes, but check Infineon’s lifecycle status for updates.
- What does “ESL” in the part number signify?
- Indicates the package type (32-TSOP) and industrial temperature range.
Technical Specifications
- What is the operating voltage range?
- 2.2V–3.6V (low-power mode) or 4.5V–5.5V (standard mode).
- What is the maximum access time?
- 55ns for both read and write cycles.
- What is the standby current consumption?
- 5µA typical in CMOS standby mode.
- Does it support 3.3V and 5V operation?
- Yes, it auto-senses the supply voltage.
- What is the data retention period?
- 10+ years with power applied.
- What is the operating temperature range?
- -40°C to +85°C (industrial grade).
- Is it RoHS compliant?
- Yes, RoHS 6/6 (lead-free and halogen-free).
- What is the package dimensions?
- 32-TSOP, 11.8mm × 8mm × 1.2mm.
- Does it require external refresh circuitry?
- No, it’s a static RAM (no refresh needed).
- What is the pin count and configuration?
- 32 pins, 8-bit parallel interface.
Compatibility & Interfacing
- Is it compatible with 5V microcontrollers?
- Yes, when operated in 4.5V–5.5V mode.
- Can it interface with 3.3V FPGAs?
- Yes, in 2.2V–3.6V mode.
- Does it support byte-wide writes?
- Yes, via 8-bit I/O pins.
- Is it JEDEC pinout compatible?
- Yes, matches standard 32-pin TSOP SRAM layouts.
- Can it replace older 5V-only SRAMs like CY62256?
- Yes, but verify timing and voltage requirements.
- Is it compatible with ARM Cortex-M processors?
- Yes, if the voltage matches the MCU’s I/O levels.
- Does it work with SPI or I2C interfaces?
- No, it’s parallel-only.
Applications
- What are typical applications?
- Industrial PLCs, medical devices, networking gear, and consumer electronics.
- Is it suitable for battery-powered devices?
- Yes, due to ultra-low standby current.
- Can it be used in automotive systems?
- Only for non-safety-critical applications (not AEC-Q100 qualified).
- Is it good for high-speed data logging?
- Limited by 55ns speed; consider faster SRAMs for >20MHz systems.
- Can it store firmware?
- Not recommended; use Flash/EEPROM for non-volatile storage.
- Is it used in IoT edge devices?
- Yes, for temporary data buffering.
Design & Integration
- Does it need pull-up/down resistors?
- Only if the host controller requires it.
- What decoupling capacitors are recommended?
- 0.1µF ceramic capacitor near the VCC pin.
- How to handle unused address pins?
- Tie them to ground or VCC as per the datasheet.
- Can it share a bus with other memories?
- Yes, with proper chip-select (CE) management.
- What is the maximum bus frequency?
- ~18MHz (calculated from 55ns access time).
- Does it require level shifters for mixed-voltage systems?
- No, it auto-adapts to 3V/5V supplies.
Troubleshooting
- What if the SRAM fails to retain data?
- Check power supply stability and decoupling.
- Why is standby current higher than 5µA?
- Ensure CE is properly asserted in CMOS standby mode.
- How to verify SRAM functionality?
- Use a memory tester or write/read checkerboard patterns.
- What causes data corruption during writes?
- Timing violations (ensure tWC ≥ 55ns).
- Can EMI affect this SRAM?
- Yes, add shielding if used in noisy environments.
Alternatives & Obsolescence
- What are drop-in replacements?
- CY62148ELL-45ZXI (faster but narrower voltage range).
- Is there a 16-bit version?
- Yes, CY62167GE30-45ZXI (16Mbit, 16-bit bus).
- What if CY62148ESL-55ZAXI is discontinued?
- Consider AS6C4008 (4Mbit, 3.3V) or CY7C1049DV33 (high-speed).
- Are there pin-compatible non-Infineon alternatives?
- IS61WV5128 (but verify voltage compatibility).
Purchasing & Logistics
- Where can I buy CY62148ESL-55ZAXI?
- Distributors like TG Microchip.
- What is the typical lead time?
- Check with distributors; Infineon lists it as active.
- Is it available in tape-and-reel packaging?
- Yes, for high-volume orders.
- How to identify counterfeit parts?
- Purchase from authorized distributors only.
Miscellaneous
- Does Infineon provide evaluation boards?
- No, but reference designs are in the datasheet.
- Are there known errata or bugs?
- None documented; check Infineon’s product notices.
- Can it operate below 2.2V?
- No, guaranteed operation starts at 2.2V.
Datasheet
CY62148ESL-55ZAXI Infineon Technologies datasheet
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