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About
The DS1230Y-120IND+ is a 256Kbit (32K x 8) non-volatile SRAM (NVSRAM) designed for applications requiring persistent data storage without the limitations of traditional EEPROM or Flash memory. It combines the fast read/write performance of SRAM with the reliability of non-volatile storage, making it ideal for industrial, embedded, and mission-critical systems where data integrity is paramount. The device features an integrated lithium energy source that automatically engages during power loss, ensuring data retention for a minimum of 10 years without external power.
This NVSRAM operates within a 4.5V to 5.5V supply range and supports industrial temperature conditions (-40°C to +85°C), denoted by the “IND” suffix in its part number. Its 120ns access time ensures high-speed performance, while its unlimited write cycles eliminate the wear-out concerns associated with EEPROM or Flash-based storage. The device is housed in a 28-pin EDIP (Embedded DIP) package, which conforms to JEDEC standards and allows direct replacement of 32K x 8 static RAMs or 28256 EEPROMs, simplifying system upgrades.
A key innovation of the DS1230Y-120IND+ is its self-contained power-fail protection circuitry, which monitors the supply voltage and instantly switches to the lithium backup source during power interruptions. This mechanism prevents data corruption by enforcing write protection when voltage falls out of tolerance. The lithium cell remains disconnected until first use, preserving its energy for long-term reliability. Additionally, the device requires no external support components for microprocessor interfacing, reducing design complexity.
The NVSRAM is available in both through-hole (EDIP) and surface-mount (PowerCap Module, PCM) configurations, offering flexibility for diverse PCB designs. The PowerCap variant includes a replaceable snap-on battery module, enabling easy maintenance without soldering. The standardized pinout across the DS1230Y series ensures compatibility with other NVSRAMs in the family, such as the 70ns or 200ns speed grades, allowing designers to tailor performance to their needs.
Target applications include industrial automation, medical devices, aerospace systems, and embedded controllers where data persistence and rapid access are critical. By combining SRAM’s speed with non-volatile storage, the DS1230Y-120IND+ eliminates the need for battery-backed external RAM or slower Flash alternatives. Its robust design, industrial temperature rating, and compliance with RoHS environmental standards further enhance its suitability for demanding environments.
Key Features
Memory Architecture & Performance
- 256Kbit (32K × 8) organization: Fully static NVSRAM with 262,144 bits, designed for direct replacement of 32K x 8 volatile SRAMs or 28256 EEPROMs.
- Parallel interface: Seamless microprocessor integration without external support circuitry.
- 120ns access/write cycle time: High-speed read/write operations, outperforming traditional EEPROM/Flash.
- Unlimited write cycles: No wear-out mechanism, unlike Flash/EEPROM, ensuring long-term reliability.
Power Management & Data Retention
- 4.5V to 5.5V operating range: Supports ±10% VCC tolerance (standard) or ±5% (optional DS1230AB variant).
- Integrated lithium energy cell: Automatically engages during power loss, providing 10-year minimum data retention in backup mode.
- Freshness retention: Battery remains disconnected until first use to preserve energy.
- Automatic power-fail detection: Enforces write protection and switches to backup power during voltage drops.
Environmental & Physical Specifications
- Industrial temperature range (–40°C to +85°C): Designated by “IND” suffix for harsh environments.
- 28-pin EDIP package: JEDEC-standard DIP module (0.6″ width, 15.24mm) for through-hole mounting.
- PowerCap Module (PCM) option: Surface-mountable variant with replaceable snap-on battery for easy maintenance.
- RoHS3 compliant: Lead-free construction meeting environmental standards.
Data Protection & Compatibility
- Standardized pinout: Matches JEDEC 28-pin DIP standards for drop-in compatibility with SRAMs/EEPROMs.
- Direct EEPROM substitution: Enhances performance over legacy EEPROMs with faster access times.
- Write protection during power transitions: Prevents data corruption during voltage fluctuations.
Additional Technical Attributes
- Low-power CMOS technology: Optimized for energy efficiency.
- Through-hole (EDIP) and PowerCap (PCM) packaging: Flexibility for diverse PCB designs.
- No external components required: Simplifies board layout and reduces BOM cost.
- Technology: NVSRAM (Non-Volatile SRAM) with self-contained control circuitry.
- Lifecycle status: Active production (last updated March 2025).
Unique Highlights
- Detachable PowerCap: Allows battery replacement without soldering (PCM variant).
- Industrial-grade reliability: Certified for extended operation in demanding conditions.
- Export compliance: ECCN EAR99 with global tariff codes (e.g., HS 8542.32.99).
Applications
Industrial & Automation Systems
- Programmable Logic Controllers (PLCs)
- Stores critical control parameters and ladder logic backups during power outages.
- Ensures uninterrupted operation in harsh environments (-40°C to +85°C).
- Motor Control Systems
- Retains motor calibration data and fault logs without EEPROM wear-out limitations.
- Robotics
- Preserves motion profiles and sensor calibration data during emergency shutdowns.
Medical & Healthcare Devices
- Patient Monitoring Equipment
- Safeguards real-time vitals data during power failures 39.
- Diagnostic Imaging Systems
- Stores temporary image buffers and device settings.
- Implantable Device Prototyping
- Used in R&D for non-volatile storage of firmware updates.
Aerospace & Defense
- Avionics Systems
- Retains flight data and configuration in black boxes.
- Satellite Subsystems
- Ensures data persistence in radiation-tolerant designs (industrial temp range).
- Military Communication Gear
- Stores encryption keys and mission-critical logs.
Embedded & IoT Solutions
- Edge Computing Devices
- Buffers sensor data before cloud transmission.
- Smart Meters
- Preserves energy usage records during grid fluctuations.
- Industrial IoT Gateways
- Acts as fail-safe storage for firmware and network configurations.
Consumer & Enterprise Electronics
- Gaming Consoles
- Saves game states and high-score tables instantly.
- Point-of-Sale (POS) Terminals
- Protects transaction logs during power interruptions.
- Enterprise Servers
- Caches RAID controller configurations.
Automotive & Transportation
- ADAS (Advanced Driver-Assistance Systems)
- Stores calibration data for LiDAR/radar systems.
- Electric Vehicle (EV) Battery Management
- Retains charge-cycle history and firmware backups.
- Aircraft Black Boxes
- Secondary storage for flight data recorders.
Telecommunications
- 5G Base Stations
- Buffers network configuration during outages.
- Optical Network Terminals
- Preserves subscriber profiles and firmware.
Specialized Use Cases
- Scientific Instruments
- Data logging in field-deployed environmental sensors.
- Cryptographic Hardware
- Secures tamper-resistant key storage.
- Legacy System Upgrades
- Drop-in replacement for obsolete SRAM/EEPROM in vintage computers.
Key Advantages for These Applications
- Unlimited writes ideal for high-frequency data logging.
- Industrial temp range (-40°C to +85°C) ensures reliability in extreme conditions.
- Direct EEPROM substitution simplifies retrofits.
Advantages
Unparalleled Data Protection and Reliability
- Absolute data security is guaranteed through instantaneous power-fail detection and automatic switchover to the integrated backup power source, ensuring zero data loss during unexpected power interruptions
- Industry-leading 10-year data retention capability provides long-term preservation of critical information without requiring periodic refresh cycles or maintenance
- Robust industrial-grade construction delivers flawless operation across the entire -40°C to +85°C temperature range, making it ideal for deployment in harsh environmental conditions
- Built-in write protection circuitry automatically safeguards memory contents during power transitions, preventing data corruption during brownout conditions
Exceptional Performance Characteristics
- Blazing-fast 120ns access time offers performance equivalent to standard SRAM while providing non-volatile storage benefits
- Unlimited read/write endurance removes all concerns about memory wear-out that plague Flash and EEPROM-based solutions
- Seamless read/write operations occur without the delays or complexities associated with non-volatile memory programming cycles
- Full SRAM compatibility ensures maximum system performance without the wait states or latency penalties of alternative technologies
Simplified System Integration Benefits
- Complete plug-and-play replacement for conventional 32Kx8 SRAM devices eliminates redesign efforts and reduces development time
- Fully self-contained solution integrates memory array, power monitoring, and backup power in a single package
- Zero external components required dramatically simplifies PCB layout and reduces overall system complexity
- Standard 28-pin DIP footprint enables effortless upgrades of existing designs without board modifications
Long-Term Operational and Maintenance Advantages
- Maintenance-free operation throughout the product lifecycle eliminates the need for battery replacements
- Patented freshness preservation technology ensures maximum backup power availability when needed
- Predictable long-term behavior removes uncertainties associated with discrete battery-backed solutions
- Inherently reliable design avoids the common failure points of external battery circuits
Cost-Saving and Efficiency Benefits
- Significant BOM reduction by consolidating multiple components into a single device
- Lower total system cost compared to discrete SRAM + battery + supervisor implementations
- Reduced PCB real estate requirements free up valuable board space for other functions
- Minimized power consumption in both active and standby modes enhances energy efficiency
Application-Specific Superiority
- Perfect solution for mission-critical systems where absolute data integrity is non-negotiable
- Ideal choice for harsh industrial environments due to its rugged construction and wide temperature capability
- Superior alternative for legacy system upgrades providing modern non-volatility in traditional packages
- Excellent fit for data logging applications where frequent writes would quickly wear out Flash memory
- Optimal selection for aerospace and defense systems requiring reliable operation in extreme conditions
Design and Manufacturing Benefits
- Simplified qualification process due to single-component solution versus multiple discrete parts
- Reduced supply chain complexity by sourcing one component instead of multiple devices
- Minimized inventory management with fewer part numbers to track and stock
- Streamlined production testing requiring only standard memory test procedures
Future-Proofing Advantages
- RoHS3 compliance ensures adherence to current and anticipated environmental regulations
- Long product lifecycle support from a leading semiconductor manufacturer
- Scalable to higher densities within the same proven product family
- Forward-compatible design that works with both legacy and modern systems
Specifications
| Category | Specification |
|---|---|
| Manufacturer | Analog Devices Inc. / Maxim Integrated |
| Mfr. Part # | DS1230Y-120IND+ |
| Description | Non-Volatile SRAM Module, 256Kbit (32K x 8), 120ns, CMOS |
| Product Category | Memory → NVSRAM (Non-Volatile SRAM) |
| Product Type | NVSRAM (Battery-Backed SRAM) |
| Series | DS1230Y |
| Memory Type | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 256Kbit (32K x 8 organization) |
| Interface | Parallel |
| Access Time | 120ns |
| Voltage Range | 4.5V to 5.5V |
| Operating Temperature | Industrial: -40°C to +85°C |
| Package / Case | 28-EDIP (Embedded DIP, 28 pins) |
| Mounting Type | Through-Hole |
| Packaging | Standard: Tube (12 units per tube) |
| RoHS Compliance | RoHS3 Compliant (Lead-free, meets environmental standards) |
| Lifecycle Status | Active (Production) – Available for purchase |
| Features | – Automatic battery switchover for data retention – Unlimited read/write cycles (like standard SRAM) – Industrial-grade temperature range |
| Battery Backup | Integrated lithium energy cell for data retention |
| Data Retention | Minimum 10 years (with battery backup) |
| ECC (Error Correction) | No (Standard SRAM interface) |
Comparison with Similar Components
1. Comparison with DS1230Y Series Variants
| Parameter | DS1230Y-120IND+ | DS1230Y-70IND+ | DS1230Y-200IND+ | DS1230AB-120IND+ |
|---|---|---|---|---|
| Access Time | 120ns | 70ns | 200ns | 120ns |
| Voltage Range | 4.5V–5.5V (±10%) | 4.5V–5.5V (±10%) | 4.5V–5.5V (±10%) | 4.75V–5.25V (±5%) |
| Temp Range | -40°C to +85°C | -40°C to +85°C | -40°C to +85°C | -40°C to +85°C |
| Package | 28-pin EDIP | 28-pin EDIP | 28-pin EDIP | 28-pin EDIP/PCM |
| Key Differentiator | Balanced speed for industrial use | Ultra-fast for high-performance systems | Cost-optimized for slower applications | Tighter voltage tolerance (±5%) |
Summary:
- The DS1230Y-70IND+ is ideal for high-speed applications (70ns access), while the DS1230Y-200IND+ suits cost-sensitive projects. The DS1230AB-120IND+ offers stricter voltage regulation for precision systems.
2. Comparison with Competing Technologies (EEPROM/Flash)
| Parameter | DS1230Y-120IND+ (NVSRAM) | EEPROM (e.g., 28256) | Flash Memory |
|---|---|---|---|
| Write Cycles | Unlimited | ~100k–1M cycles | ~10k–100k cycles |
| Access Time | 120ns | 150ns–1µs | 50ns–100ns (NOR Flash) |
| Data Retention | 10 years (battery-backed) | 10–100 years (intrinsic) | 10–20 years (intrinsic) |
| Power Fail Protection | Automatic switchover | Requires external circuitry | Requires external circuitry |
Summary:
NVSRAM outperforms EEPROM/Flash in write endurance and power-fail response, making it superior for real-time data logging. However, EEPROM/Flash may be better for archival storage due to intrinsic non-volatility.
3. Comparison with Other NVSRAMs (e.g., CY14B101Q)
| Parameter | DS1230Y-120IND+ | CY14B101Q (Infineon) |
|---|---|---|
| Density | 256Kbit | 1Mbit |
| Interface | Parallel | SPI/I2C |
| Temp Range | -40°C to +85°C | -40°C to +85°C |
| Package | EDIP-28 | SOIC-16 |
Summary:
The CY14B101Q offers higher density and serial interfaces but lacks the drop-in compatibility of the DS1230Y’s parallel EDIP package. Choose based on interface requirements.
4. Comparison with DS1230Y-120+ (Commercial Grade)
| Parameter | DS1230Y-120IND+ | DS1230Y-120+ |
|---|---|---|
| Temp Range | -40°C to +85°C | 0°C to +70°C |
| Voltage Range | 4.5V–5.5V | 4.5V–5.5V |
| Applications | Industrial/Aerospace | Consumer/Commercial |
Summary:
The DS1230Y-120IND+ extends reliability to harsh environments, while the DS1230Y-120+ is cost-optimized for benign conditions.
5. Comparison with DS1270W-100 (Higher Density)
| Parameter | DS1230Y-120IND+ | DS1270W-100 |
|---|---|---|
| Density | 256Kbit | 16Mbit |
| Package | EDIP-28 | 36-pin EDIP |
| Access Time | 120ns | 100ns |
Summary:
The DS1270W-100 suits high-density needs but requires larger PCB space and higher cost.
6. Comparison with FM93C66ALMT8X (Serial EEPROM)
| Parameter | DS1230Y-120IND+ | FM93C66ALMT8X |
|---|---|---|
| Interface | Parallel | Microwire (Serial) |
| Write Cycles | Unlimited | 1M cycles |
| Speed | 120ns | 3MHz clock |
Summary:
The FM93C66ALMT8X is compact but slower and limited in endurance.
7. Comparison with GS8160F36DGT-7.5 (Volatile SRAM)
| Parameter | DS1230Y-120IND+ | GS8160F36DGT-7.5 |
|---|---|---|
| Volatility | Non-Volatile | Volatile |
| Density | 256Kbit | 18Mbit |
| Power Backup | Integrated | Requires external solution |
Summary:
The GS8160F36DGT-7.5 offers higher speed/density but lacks built-in data retention.
Key Decision Factors
- Speed vs. Cost:
- For speed-critical systems: DS1230Y-70IND+ (70ns).
- For budget-sensitive designs: DS1230Y-200IND+ (200ns).
- Environmental Conditions:
- Industrial: DS1230Y-120IND+ (-40°C to +85°C).
- Commercial: DS1230Y-120+ (0°C to +70°C).
- Interface Requirements:
- Parallel: DS1230Y series for legacy systems.
- Serial: CY14B101Q for space-constrained designs.
- Density Needs:
- ≤256Kbit: DS1230Y-120IND+.
- ≥1Mbit: CY14B101Q or DS1270W-100.
Final Recommendation
- For Industrial Systems: DS1230Y-120IND+ balances speed, temperature resilience, and legacy compatibility.
- For High-Density Applications: CY14B101Q (1Mbit, SPI/I2C) or DS1270W-100 (16Mbit).
- Avoid NVSRAM if: Serial interfaces or ultra-low power are needed—consider EEPROM/Flash instead.
Rationale: The DS1230Y series’ unlimited write cycles, industrial temp support, and drop-in replacement capability make it the best choice for mission-critical systems requiring reliability and performance.
Frequently Asked Questions (FAQs)
General Information
- What is the DS1230Y-120IND+?
A 256Kbit (32Kx8) non-volatile SRAM with integrated battery backup from Analog Devices. - What does “NVSRAM” stand for?
Non-Volatile Static Random-Access Memory. - What is the operating voltage range?
4.5V to 5.5V (±10%). - What temperature range does it support?
Industrial: -40°C to +85°C. - What package does it come in?
28-pin EDIP (Embedded DIP).
Technical Specifications
- What is the access time?
120ns. - How is memory organized?
32K words × 8 bits. - Does it require external components?
No, it’s fully self-contained. - What is the data retention period?
Minimum 10 years with battery backup. - Is it RoHS compliant?
Yes, RoHS3 compliant. - What is the typical standby current?
<1µA in battery backup mode. - Does it have unlimited write cycles?
Yes, unlike Flash/EEPROM.
Battery & Power Management
- What type of battery is integrated?
Lithium energy cell. - How does power-fail protection work?
Automatically switches to battery when VCC drops below 4.5V. - Can the battery be replaced?
No (in EDIP version); PowerCap (PCM) variant allows replacement. - What happens if battery dies?
Data is lost; battery typically lasts >10 years. - Does battery drain when powered?
No, it disconnects when VCC is normal.
Compatibility & Interfacing
- Is it pin-compatible with standard SRAM?
Yes, with JEDEC 28-pin DIP SRAMs. - Can it replace EEPROMs?
Yes, as a drop-in replacement for 28256 EEPROMs. - What microprocessors does it work with?
Any 5V µP (68000, 8051, etc.). - Does it need special drivers?
No, interfaces like standard SRAM.
Applications
- Where is it commonly used?
Industrial controls, medical devices, aerospace. - Can it be used in automotive systems?
Yes, but not AEC-Q100 qualified. - Is it suitable for IoT devices?
Yes, for edge data logging. - Can it store firmware?
Yes, but typically used for critical data.
Installation & Usage
- How to handle ESD sensitivity?
Use standard IC handling precautions. - Is soldering temperature critical?
Follow standard DIP soldering guidelines. - Can it be socketed?
Yes, but may reduce reliability in high-vibration environments. - What’s the recommended decoupling?
0.1µF ceramic capacitor near VCC.
Reliability & Lifetime
- What’s the MTBF?
Typically >1 million hours. - How does temperature affect battery life?
Higher temps slightly reduce battery longevity. - Is it radiation-hardened?
No, standard industrial grade. - Can it withstand mechanical shock?
Yes, but battery may disconnect temporarily.
Alternatives & Comparisons
- How does it compare to FRAM?
Similar endurance, but FRAM doesn’t need battery. - When to choose EEPROM instead?
For lower cost and higher density needs. - Is there a 3.3V version?
No, this is 5V only.
Troubleshooting
- What if data corrupts after power cycle?
Check VCC stability during power-down. - How to test battery health?
Monitor VCC fall time during power-off. - Why does my system freeze during writes?
Ensure proper write timing (120ns cycle). - Can magnetic fields affect it?
No, unlike MRAM.
Purchasing & Logistics
- Is it in active production?
Yes (as of 2025). - What’s the lead time?
Typically 6-8 weeks. - Are samples available?
Yes, through Analog Devices. - What’s the minimum order quantity?
Usually 100 unit. - Where can I find the datasheet?
Analog Devices website.
Bonus: Advanced Technical FAQs
- What’s the battery capacity?
Typically 48mAh. - How is write protection implemented?
Automatic during power transitions. - Can it be used in RAID controllers?
Yes, for cache memory. - Does it support partial array refresh?
No, standard SRAM interface. - What’s the typical battery shelf life?
10+ years unpowered.
Datasheet
DS1230Y-120IND+ Analog Devices datasheet
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