NTH4L022N120M3S Onsemi

NTH4L022N120M3S Onsemi

For order or price inquiry of NTH4L022N120M3S Onsemi – Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L Please fill the RFQ form we will check out inventory and offer you our best price .





About NTH4L022N120M3S Onsemi

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.



  • TO-247-4L Package with Kelvin source configuration
  • Excellent FOM [ = Rdson * Eoss ]
  • New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses
  • 15V to 18V Gate Drive
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant



Product Attribute Attribute Value
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-4
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 1.2 kV
Id – Continuous Drain Current: 68 A
Rds On – Drain-Source Resistance: 30 mOhms
Vgs – Gate-Source Voltage: – 10 V, + 22 V
Vgs th – Gate-Source Threshold Voltage: 4.4 V
Qg – Gate Charge: 151 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 352 W
Channel Mode: Enhancement
Packaging: Tube
Brand: onsemi
Configuration: Single
Fall Time: 13 ns
Forward Transconductance – Min: 34 S
Product Type: MOSFET
Rise Time: 24 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 18 ns



NTH4L022N120M3S Onsemi Datasheet


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