February 10, 2023

NVH4L022N120M3S Onsemi

For order or price inquiry of NVH4L022N120M3S Onsemi – Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L Please fill the RFQ form we will check out inventory and offer you our best price .

RFQ

Table of Contents ( Quick Access )

About NVH4L022N120M3S Onsemi

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

Max RDS(on) = 30mΩ at Vgs =18V, Id = 60A
Qualified for Automotive According to AEC−Q101
15V to 18V Gate Drive
Devices are Pb−Free and are RoHS Compliant
New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses

Specifications

Product Attribute	Attribute Value
Manufacturer:	onsemi
Product Category:	MOSFET
Technology:	SiC
Mounting Style:	Through Hole
Package / Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	1.2 kV
Id – Continuous Drain Current:	68 A
Rds On – Drain-Source Resistance:	30 mOhms
Vgs – Gate-Source Voltage:	– 10 V, + 22 V
Vgs th – Gate-Source Threshold Voltage:	4.4 V
Qg – Gate Charge:	151 nC
Minimum Operating Temperature:	– 55 C
Maximum Operating Temperature:	+ 175 C
Pd – Power Dissipation:	352 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance – Min:	34 S
Product Type:	MOSFET
Rise Time:	24 ns
Subcategory:	MOSFETs
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	18 ns