STS9P3LLH6 STMicroelectronics

STS9P3LLH6 STMicroelectronics

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STS9P3LLH6 STMicroelectronics Specifications

Product Attribute Attribute Value
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOIC-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 9 A
Rds On – Drain-Source Resistance: 12 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 24 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 2.7 W
Channel Mode: Enhancement
Tradename: STripFET
Series: STS9P3LLH6
Packaging: Reel
Packaging: Cut Tape
Brand: STMicroelectronics
Configuration: Single
Fall Time: 18 ns
Forward Transconductance – Min:
Product Type: MOSFET
Rise Time: 93 ns
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 13.2 ns
Unit Weight: 0.002610 oz


STS9P3LLH6 Datasheet

STS9P3LLH6 STMicroelectronics Datasheet


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