STS9P3LLH6 STMicroelectronics
MOSFET

STS9P3LLH6 STMicroelectronics

For order or price inquiry of STS9P3LLH6 STMicroelectronics Please visit our website and fill the RFQ form we will check out inventory and offer you our best price .

 

RFQ

 

 

STS9P3LLH6 STMicroelectronics Specifications

Product Attribute Attribute Value
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOIC-8
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 9 A
Rds On – Drain-Source Resistance: 12 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1 V
Qg – Gate Charge: 24 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 2.7 W
Channel Mode: Enhancement
Tradename: STripFET
Series: STS9P3LLH6
Packaging: Reel
Packaging: Cut Tape
Brand: STMicroelectronics
Configuration: Single
Fall Time: 18 ns
Forward Transconductance – Min:
Product Type: MOSFET
Rise Time: 93 ns
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 13.2 ns
Unit Weight: 0.002610 oz

 

STS9P3LLH6 Datasheet

STS9P3LLH6 STMicroelectronics Datasheet

 

Contact us for more information

Contact us for more information and stock inventory inquiry of STS9P3LLH6 STMicroelectronics.

China Email : info@tg-microchip.com

Hong Kong Email : hk@tg-microchip.com

Russia Email : russia@tg-microchip.com

 

Leave a Reply

Your email address will not be published.

Fill out this field
Fill out this field
Please enter a valid email address.
You need to agree with the terms to proceed

Menu