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STS9P3LLH6 STMicroelectronics Specifications
| Product Attribute | Attribute Value |
| Manufacturer: | STMicroelectronics |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds – Drain-Source Breakdown Voltage: | 30 V |
| Id – Continuous Drain Current: | 9 A |
| Rds On – Drain-Source Resistance: | 12 mOhms |
| Vgs – Gate-Source Voltage: | – 20 V, + 20 V |
| Vgs th – Gate-Source Threshold Voltage: | 1 V |
| Qg – Gate Charge: | 24 nC |
| Minimum Operating Temperature: | – 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd – Power Dissipation: | 2.7 W |
| Channel Mode: | Enhancement |
| Tradename: | STripFET |
| Series: | STS9P3LLH6 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | STMicroelectronics |
| Configuration: | Single |
| Fall Time: | 18 ns |
| Forward Transconductance – Min: | – |
| Product Type: | MOSFET |
| Rise Time: | 93 ns |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 50 ns |
| Typical Turn-On Delay Time: | 13.2 ns |
| Unit Weight: | 0.002610 oz |
STS9P3LLH6 Datasheet
STS9P3LLH6 STMicroelectronics Datasheet
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