STD80N450K6 STMicroelectronics

STD80N450K6 STMicroelectronics

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STD80N450K6 STMicroelectronics Specifications

Product Attribute Attribute Value
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: DPAK-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 800 V
Id – Continuous Drain Current: 10 A
Rds On – Drain-Source Resistance: 450 mOhms
Vgs – Gate-Source Voltage: – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage: 3 V
Qg – Gate Charge: 17.3 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 83 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Brand: STMicroelectronics
Configuration: Single
Fall Time: 12.7 ns
Product Type: MOSFET
Rise Time: 4 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 28.8 ns
Typical Turn-On Delay Time: 10.6 ns
Unit Weight: 0.011640 oz


STD80N450K6 Datasheet

STD80N450K6 STMicroelectronics Datasheet


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